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Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

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Abstract we report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an inas(10 nm)/gasb(5 nm) coupled quantum… Click to show full abstract

Abstract we report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an inas(10 nm)/gasb(5 nm) coupled quantum well. we observe a narrow and intense maximum (~500 kω) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above t?=?7 k and perfect stability against quantizing magnetic fields. we discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.

Keywords: zero gap; charge neutrality; inas gasb; large resistance

Journal Title: New Journal of Physics
Year Published: 2018

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