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Preparation of all-oxide β-Ga2O3/α-MoO3 heterojunction towards self-driven deep ultraviolet photosensor

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A self-driven all-oxide β-Ga2O3/α-MoO3 heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA W−1, specific detectivity (D*) of 1011 Jones… Click to show full abstract

A self-driven all-oxide β-Ga2O3/α-MoO3 heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA W−1, specific detectivity (D*) of 1011 Jones and linear dynamic region (LDR) of 162.9 dB at 10 V, and R of 0.26 mA W−1, D* of 4 × 1010 Jones and LDR of 89.44 dB at −10 V. In addition, it could also operate repeatably and stably at zero bias, illustrating that it is a self-driven photodetector. In one word, the fabricated β-Ga2O3/α-MoO3 heterojunction has a potential to work as a self-driven solar-blind UV sensing device.

Keywords: moo3 heterojunction; ga2o3 moo3; oxide ga2o3; self driven

Journal Title: Physica Scripta
Year Published: 2021

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