Yttrium Manganite is a multiferroic material and has potential applications in Ferroelectric Random Access Memories. Chromium is substituted with a view to enhancing the electrical conductivity. Compositions belonging to the… Click to show full abstract
Yttrium Manganite is a multiferroic material and has potential applications in Ferroelectric Random Access Memories. Chromium is substituted with a view to enhancing the electrical conductivity. Compositions belonging to the series Y1−xCrxMnO3, (x = 0, 0.05, 0.1, and 0.3) were synthesized by employing a citrate gel method. Pre characterized samples using X-ray diffraction and Scanning Electron Microscopy were then subjected to impedance spectroscopy to understand the conduction mechanism vis-à-vis small polaron hopping or variable range hopping. Cole-Cole and Nyquist plots were utilized to arrive at the equivalent circuit. Ferroelectric measurements were carried out to understand the polarization mechanisms. Magnetic measurements were also conducted to observe the change in magnetic properties with Chromium substitution. Field Cooled (FC) and Zero Field Cooled (ZFC) magnetization measurements revealed the presence of ferromagnetic clusters in an antiferromagnetic matrix. It has been found that Chromium substitution enhances the electrical conductivity while it diminishes the ferroelectric properties.
               
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