LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

Photo from academic.microsoft.com

Bilayer graphene quantum dots with rotational stacking faults (RSFs) having different rotational angles were studied. Using the first-principles calculation, we determined that these stacking faults could quantitatively modulate the magnetism… Click to show full abstract

Bilayer graphene quantum dots with rotational stacking faults (RSFs) having different rotational angles were studied. Using the first-principles calculation, we determined that these stacking faults could quantitatively modulate the magnetism and the distribution of spin and energy levels in the electronic structures of the dots. In addition, by examining the spatial distribution of unpaired spins and Bader charge analysis, we found that the main source of magnetic moment originated from the edge atoms of the quantum dots. Our research results can potentially provide a new path for producing all-carbon nanodevices with different electrical and magnetic properties.

Keywords: graphene quantum; bilayer graphene; modulation magnetic; stacking faults; rotational stacking; quantum dots

Journal Title: Chinese Physics B
Year Published: 2019

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.