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High quality 0.02 mol%, 0.05 mol% and 0.08 mol% Fe:β-Ga2O3 single crystals were grown by the Floating zone method. The crystal structure, optical, electrical and thermal properties were measured and… Click to show full abstract
High quality 0.02 mol%, 0.05 mol% and 0.08 mol% Fe:β-Ga2O3 single crystals were grown by the Floating zone method. The crystal structure, optical, electrical and thermal properties were measured and discussed. Fe:β-Ga2O3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga2O3 crystal reached to 3.63×1011 Ω·cm. The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate of the high-power field effect transistors (FETs).
Journal Title: Chinese Physics B
Year Published: 2020
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