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Ultrabroadband mid-infrared emission from Cr2+:ZnSe-doped chalcogenide glasses prepared via hot uniaxial pressing and melt-quenching

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We reported an ultrabroadband mid-infrared (MIR) emission in the range of 1800 nm–3100 nm at room temperature (RT) from a Cr2+:ZnSe-doped chalcogenide glasses (ChGs) and studied the emission-dependent properties on… Click to show full abstract

We reported an ultrabroadband mid-infrared (MIR) emission in the range of 1800 nm–3100 nm at room temperature (RT) from a Cr2+:ZnSe-doped chalcogenide glasses (ChGs) and studied the emission-dependent properties on the doping methods. A series of Cr2+:ZnSe/As40S57Se3 (in unit wt.%) glass-ceramics were prepared by hot uniaxial pressing (HUP) and melt-quenching methods, respectively. The glass-ceramics with MIR emission bands greater than 1000 nm were successfully prepared by both methods. The effects of matrix glass composition and grain doping concentration on the optical properties of the samples were studied. The occurrence state, morphology of the grains, and the microscopic elemental distributions were characterized using x-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive spectrometer (EDS) analyses.

Keywords: ultrabroadband mid; znse doped; doped chalcogenide; cr2 znse; mid infrared; emission

Journal Title: Chinese Physics B
Year Published: 2021

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