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In this paper, based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts… Click to show full abstract
In this paper, based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor (H-TFET). This model accounts for both the effects of source depletion and inversion charge which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation, and is greatly improved in comparison with the conventional model based on Maxwell-Boltzmann approximation. Furthermore, the dependences of the surface potential and electric field on biases are well predicted and thoroughly analyzed.
Journal Title: Chinese Physics B
Year Published: 2023
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