We fabricated SrRuO3/PbZr0.52Ti0.48O3 heterostructures with an in-plane tensile-strained SrRuO3 layer and investigated the effect of an applied electric field on the anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance… Click to show full abstract
We fabricated SrRuO3/PbZr0.52Ti0.48O3 heterostructures with an in-plane tensile-strained SrRuO3 layer and investigated the effect of an applied electric field on the anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity were observed. By applying positive and negative electric fields, the intersecting hump-like features are suppressed and enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field at a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO3. The experimental results are helpful to realize magnetization rotation modulation in spintronic devices based on SrRuO3 heterostructures.
               
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