LAUSR

A single-molecule magnet is a long-sought-after nanoscale component because it can enable miniaturized nonvolatile memory storage devices. The signature of a singlemolecule magnet is switching between two bistable magnetic ground states under an external magnetic field. Based on this feature, we theoretically investigated a magnetic-field-controlled reversible resistance changes active at low temperatures in a molecular magnetic tunnel junction, which consists of a single-molecule magnet sandwiched between one ferromagnetic electrode and one normal metal electrode. Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization. Moreover, the different magnetic configurations can be ”read out” based on different resistance states or different spin polarization parameters in the current spectrum, even in the absence of a magnetic field. Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices. The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule. This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices, with potential application in future high-density nonvolatile memory devices.