LAUSR

In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET (TGMC-LDMOS) on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n + -InGaAs region located over the substrate. In a cell length of 5 μ m, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current ( I D ) leading to a large reduction in the specific on-resistance ( R on-sp ). Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance ( g m ) resulting in significant improvement in cut-off frequency ( f T ) and oscillation frequency ( f max ). Using two-dimensional numerical simulations, a 55 V TGMC-LDMOS is demonstrated to achieve 7 times higher I D , 6.2 times lower R on-sp , 6.3 times higher peak g m , 2.6 times higher f T , and 2.5 times increase in f max in comparison to a conventional device for the identical cell length.