LAUSR

A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built. The reverse bias I–V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the micro-plasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses (30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.