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Due to the remarkable growth rate compared to another growth methods for gallium nitride (GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product GaN… Click to show full abstract
Due to the remarkable growth rate compared to another growth methods for gallium nitride (GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product GaN substrates. In this review, commercial HVPE systems and the GaN crystals grown by them are demonstrated. This article also illustrates some innovative attempts to develop homebuilt HVPE systems. Finally, the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.
Keywords:
hydride vapor;
vapor phase;
gallium nitride;
phase epitaxy;
growth
Journal Title: Journal of Semiconductors
Year Published: 2019
Link to full text (if available)
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Journal Title: Journal of Semiconductors
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!