LAUSR

A virtual gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN high electron mobility transistor (HEMT). The model confirms the utility of a field plate (FP) improves sheet carrier density and suppress current collapse. At the gate-edge of the drain side, the channel electron densities with the field plate are 2.1 × 109, 4.68 × 109, and 8.63 × 109 cm–3 for LFP = 0.5, 1, and 1.5 μm is increased with respect to the length of the field plate, whereas without the field plate it shows much lower electron density value of 1.14 × 109 cm–3 in the device. The increase of drain current from 736 to 813 mA/mm with the increase in LFP from 0 to 1.5 μm is observed for drain voltage at 40 V. Furthermore, the use of the field plate shows a great control over the electric field and trapped carrier density at the gate edge of the device. The model formulated in this paper correlated-well with the simulation result of AlGaN/GaN HEMT.