Photo by testalizeme from unsplash
Immunity against possible random discharges inside active detector volume of MPGDs is one of the key aspects that should be addressed in the design of the front-end electronics. This issue… Click to show full abstract
Immunity against possible random discharges inside active detector volume of MPGDs is one of the key aspects that should be addressed in the design of the front-end electronics. This issue becomes particularly critical for systems with high channel counts and high density readout employing the front-end electronics built as multichannel ASICs implemented in modern CMOS technologies, for which the breakdown voltages are in the range of a few Volts. The paper presents the design of various input protection structures integrated in the ASIC manufactured in a 350 nm CMOS process and test results using an electrical circuit to mimic discharges in the detectors.
Journal Title: Journal of Instrumentation
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!