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Photoluminescence (PL) spectrumprovides themost conventionalmeasurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry–Perot oscillations are often observedmodulating the emission peaks. Afittingmodel for PL intensity accounting themicrocavity between… Click to show full abstract
Photoluminescence (PL) spectrumprovides themost conventionalmeasurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry–Perot oscillations are often observedmodulating the emission peaks. Afittingmodel for PL intensity accounting themicrocavity between air/GaNandGaN/sapphire heterostructure was proposed to treat the PL spectra of different GaN-based LEDs, extracting key factors that implied the interfacial optical properties. This approach was successfully verified bymeasurements of spectroscopic ellipsometry, thenwas applied to quantitatively analyse the interfacial-defect-related distortion of dielectric properties. The extracted oscillation coefficient is sensitive to the change of interface qualities and reveals the optical properties of internal interfaces. The newmethodmay also be applied to the other heterojunction LEDs.
Journal Title: Materials Research Express
Year Published: 2018
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