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Mn doped GaSb may be a good candidate for ferromagnetic semiconductor predicted by the DFT + U approach

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The method of the first-principles calculations based on density functional theory (DFT) plus U (DFT + U) was employed to study the electronic structures and magnetic properties in Mn doped… Click to show full abstract

The method of the first-principles calculations based on density functional theory (DFT) plus U (DFT + U) was employed to study the electronic structures and magnetic properties in Mn doped GaSb systematically in order to shed light on the potential of the system as a good candidate for ferromagnetic semiconductor with higher Curie temperature. The studied results show that both MnGa and MnSb substitutions can induce 4 μ B and 2 μ B total magnetic moment respectively in the system. The magnetic interactions among MnGas and MnSbs are all most ferromagnetic except the coupling between nearest-neighbor MnGa and MnSb. The ferromagnetic coupling mechanisms are discussed in this paper.

Keywords: doped gasb; ferromagnetic semiconductor; candidate ferromagnetic; good candidate

Journal Title: Materials Research Express
Year Published: 2018

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