Preparation of ordered CoPt on Si substrates by lithography-friendly deposition is significant for expanding future applications of spintronic devices. In this study, ordered CoPt alloys including the L10 phase with… Click to show full abstract
Preparation of ordered CoPt on Si substrates by lithography-friendly deposition is significant for expanding future applications of spintronic devices. In this study, ordered CoPt alloys including the L10 phase with a maximum coercivity of 2.1 kOe are formed in electron-beam-deposited 11.4 nm thick Pt/Co bilayer thin films on Si/SiO2 substrates via interdiffusion during rapid thermal annealing (RTA). The effects of annealing temperature on the magnetic properties, crystal structures, cross-sectional elemental profiles, and surface morphologies of the films were analyzed by vibrating sample magnetometer (VSM), grazing incidence x-ray diffraction (GI-XRD), energy-dispersive x-ray spectroscopy (EDX), and scanning electron microscopy (SEM), respectively. For the as-deposited film, polycrystalline Pt was confirmed by uniform Debye–Scherrer rings of Pt. At 200 °C, interdiffusion between Co and Pt atoms in the film starts to be observed by EDX elemental mapping, and at 300 °C, alloying of Co and Pt atoms was confirmed by diffraction peaks corresponding to A1-disordered CoPt. At 400 °C, the in-plane coercivity of the film began to increase. At 700 °C, ordered CoPt alloys including the L10 phase were confirmed by superlattice diffraction peaks, indicating that the graded film contained L10-ordered CoPt. At 800 °C, a maximum coercivity of 2.1 kOe was observed by VSM, where the easy axis of magnetization was along the in-plane direction, further suggesting the formation of L10-ordered CoPt, and its. At 900 °C, deformation of the ordered CoPt alloys was observed by GI-XRD, and the grain size of the film reached a maximum.
               
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