Photo from wikipedia
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The… Click to show full abstract
In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity (σ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario.
Journal Title: Materials Research Express
Year Published: 2021
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!