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Multiple photodetachment of silicon anions via K -shell excitation and ionization

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A. Perry-Sassmannshausen, T. Buhr, M. Martins, S. Reinwardt, F. Trinter, 4 A. Müller, S. Fritzsche, 7 and S. Schippers ∗ I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany… Click to show full abstract

A. Perry-Sassmannshausen, T. Buhr, M. Martins, S. Reinwardt, F. Trinter, 4 A. Müller, S. Fritzsche, 7 and S. Schippers ∗ I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany Institut für Kernphysik, Goethe-Universität Frankfurt am Main, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, Germany Molecular Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany Institut für Atomund Molekülphysik, Justus-Liebig-Universität Gießen, Leihgesterner Weg 217, 35392 Giessen, Germany Helmholtz-Institut Jena, Fröbelstieg 3, 07743 Jena, Germany Theoretisch-Physikalisches Institut, Friedrich-Schiller-Universität Jena, 07743 Jena, Germany (Dated: November 3, 2021)

Keywords: germany; multiple photodetachment; photodetachment silicon; silicon anions; germany institut; universit

Journal Title: Physical Review A
Year Published: 2021

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