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The band gaps and band offsets of the transparent conducting oxides Ga${}_{2}$O${}_{3}$ and (Al${}_{x}$Ga${}_{1\ensuremath{-}x}$)${}_{2}$O${}_{3}$ are key parameters in the design of next-generation high-power transistors and solar-blind ultraviolet photodetectors and solar… Click to show full abstract
The band gaps and band offsets of the transparent conducting oxides Ga${}_{2}$O${}_{3}$ and (Al${}_{x}$Ga${}_{1\ensuremath{-}x}$)${}_{2}$O${}_{3}$ are key parameters in the design of next-generation high-power transistors and solar-blind ultraviolet photodetectors and solar cells. Based on first-principles calculations, the authors determine the mixing enthalpies, band-gap bowing, and band offsets of (Al${}_{x}$Ga${}_{1\ensuremath{-}x}$)${}_{2}$O${}_{3}$ alloys. The band gap can be tuned across a wide range by changing Al composition, adding great flexibility in device design, while the offset arises mostly from discontinuity in the conduction band.
Journal Title: Physical review applied
Year Published: 2018
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