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X iv :2 10 5. 09 53 8v 2 [ ph ys ic s. ap pph ] 2 8 A ug 2 02 1 Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells Huan-Ting Shen, Claude Weisbuch, 3 James S. Speck, and Yuh-Renn Wu a) Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan Materials Department, University of California, Santa Barbara, CA 93106-5050, USA Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, CNRS, IP Paris, 91128 Palaiseau Cedex, France