LAUSR

The usual Hall effect in a semiconductor leads to a voltage perpendicular to an applied static magnetic field. The authors significantly extend their recent work and demonstrate $e\phantom{\rule{0}{0ex}}x\phantom{\rule{0}{0ex}}p\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}y$ that not only the sign but also the direction of the Hall field can be tailored by a metamaterial's microstructure. They show that, with judicious engineering, the Hall voltage can be $p\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}l$ to the applied field, enabling $e.g.$ detection of local magnetic vortices.