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Two-dimensional electron gas in a metal/amorphous oxide interface with spin-orbit interaction

The formation of novel two-dimensional electron gas (2DEG) with high mobility in metal/amorphous interfaces has motivated an ongoing debate regarding the formation and novel characteristics of these 2DEGs. Here we… Click to show full abstract

The formation of novel two-dimensional electron gas (2DEG) with high mobility in metal/amorphous interfaces has motivated an ongoing debate regarding the formation and novel characteristics of these 2DEGs. Here we report an optical study, based on infrared spectroscopic ellipsometry, of nonmagnetic metal and amorphous semiconducting oxide ($\mathrm{Cu}/{\mathrm{Bi}}_{2}{\mathrm{O}}_{3}$) interfaces that confirms the formation of a 2DEG with spin orbit coupling (SOC). The 2DEG optical response was simulated with a uniaxial diagonal dielectric tensor within a subnanometer thin layer, where its $x$ and $z$ component line shapes resolved in both free-electron and peaklike contributions, resulting in very similar theoretical predictions [M. Xie et al., Phys. Rev. B 89, 245417 (2014)] of a 2DEG confined in the normal direction of a perovskite interface. In particular, the small but finite conducting character of the $z$ component provides an unambiguous signature of the presence of the 2DEG in the Cu/${\mathrm{Bi}}_{2}{\mathrm{O}}_{3}$ system. Although the original constituent materials do not possess SOC, the resulting interfacial hybridization of such states induce electronic asymmetric wave functions. This work demonstrates the detection of 2DEG in amorphous crystals, allowing one to study its challenging interfacial phenomena such as SOC and interface-bulk coupling, overcoming an experimental impediment which, for decades, has held back important advancements for the understanding of 2DEGs in amorphous materials.

Keywords: metal amorphous; mathrm; dimensional electron; electron; interface; two dimensional

Journal Title: Physical Review B
Year Published: 2019

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