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Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure

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We demonstrate control of the magnetism of Pd(100) ultrathin films, which show d-electron quantum-well induced ferromagnetism, via modulation of the interface electronic state using density functional calculation. From an analysis… Click to show full abstract

We demonstrate control of the magnetism of Pd(100) ultrathin films, which show d-electron quantum-well induced ferromagnetism, via modulation of the interface electronic state using density functional calculation. From an analysis based on the phase model, forming the Au/Pd(100) interface induces hybridization of the wave function of d-electron quantum-well states, and modulates the term of the scattering phase shift as a function of the reciprocal lattice point. In contrast, forming the Al interface, which has only s-electrons at the Fermi energy, cannot modify the scattering phase shift. Our finding indicates the possibility of modifying the phase shift by tailoring the interface electronic states using hybridization of the wave function, and this efficiently changes the density of states near the Fermi energy of Pd films, and the switching between paramagnetism and ferromagnetism occurs based on the condition for ferromagnetism (Stoner criterion).

Keywords: well states; quantum well; interface electronic; phase shift; phase

Journal Title: Physical Review B
Year Published: 2020

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