LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Van Hove singularity arising from Mexican-hat-shaped inverted bands in the topological insulator Sn-doped Bi1.1Sb0.9Te2S

Photo from wikipedia

The optical properties of Sn-doped Bi1.1Sb0.9Te2S, the most bulk-insulating topological insulator thus far, have been examined at different temperatures over a broad frequency range. No Drude response is detected in… Click to show full abstract

The optical properties of Sn-doped Bi1.1Sb0.9Te2S, the most bulk-insulating topological insulator thus far, have been examined at different temperatures over a broad frequency range. No Drude response is detected in the low-frequency range down to 30 cm, corroborating the excellent bulkinsulating property of this material. Intriguingly, we observe a sharp peak at about 2 200 cm in the optical conductivity at 5 K. Further quantitative analyses of the line shape and temperature dependence of this sharp peak, in combination with first-principles calculations, suggest that it corresponds to a van Hove singularity arising from Mexican-hat-shaped inverted bands. Such a van Hove singularity is a pivotal ingredient of various strongly correlated phases.

Keywords: van hove; 1sb0 9te2s; bi1 1sb0; doped bi1; hove singularity

Journal Title: Physical Review B
Year Published: 2020

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.