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Scaling the electrical current switching of exchange bias in fully epitaxial antiferromagnet/ferromagnet bilayers

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While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We… Click to show full abstract

While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field (${H}_{\text{ex}}$) in AFM-${\mathrm{Mn}}_{3}A\mathrm{N}$/ferromagnet-${\mathrm{Co}}_{3}\mathrm{FeN}$ bilayers. An applied pulse current can manipulate ${H}_{\text{ex}}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $\ensuremath{\tau}$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of ${H}_{\text{ex}}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.

Keywords: current switching; mathrm; switching exchange; exchange bias; electrical current

Journal Title: Physical Review B
Year Published: 2020

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