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Many-electron redistribution in n -doped semiconductor nanostructures under external electric field by using a center-of-mass approach

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The study of an external force triggering the many-electron redistribution in nanostructures is of importance for both theoretical and practical interest in condensed matter physics. Hence, the goal of this… Click to show full abstract

The study of an external force triggering the many-electron redistribution in nanostructures is of importance for both theoretical and practical interest in condensed matter physics. Hence, the goal of this contribution is to theoretically investigate the influence of an external electric field (EEF) on the ground and excited states of a system of many-electrons confined in GaAs/AlGaAs nanostructures. To deal with the many-body issue, we employ a Yukawa-like potential in a two-electron framework, while it is proposed to explore the challenging EEF contribution by analyzing its effect on the electronic center-of-mass framework. Thus, while the Yukawa-like potential allows us to model the many-electron interaction in the range from ${10}^{17}$ to ${10}^{23}$ electrons/${\mathrm{cm}}^{3}$, via the adjustment of a simple screening parameter; the center-of-mass approximation also allows us to describe easily the effect of the EEF separately. Internal electronic distributions in nanostructures of various sizes and electronic concentrations are obtained and discussed for EEF of variable magnitude. This alternative approach enables us to decouple the electron-electron and the EEF interactions, which is useful in determining the origin of the observed features. We show that this theoretical framework is well suited to get relevant information in semiconductor nanostructures of practical sizes and realistic doped levels.

Keywords: center mass; external electric; many electron; electron redistribution; electric field

Journal Title: Physical Review B
Year Published: 2020

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