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Magnetoconductance and photoresponse properties of disordered NbTiN films

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M. Sidorova, 2 A.D. Semenov, H.-W. Hübers, 2 S. Gyger, S. Steinhauer, X. Zhang, 5 and A. Schilling Humboldt-Universität zu Berlin, Department of Physics, Newtonstr. 15, 12489 Berlin, Germany German… Click to show full abstract

M. Sidorova, 2 A.D. Semenov, H.-W. Hübers, 2 S. Gyger, S. Steinhauer, X. Zhang, 5 and A. Schilling Humboldt-Universität zu Berlin, Department of Physics, Newtonstr. 15, 12489 Berlin, Germany German Aerospace Center (DLR), Institute of Optical Sensor Systems, Rutherfordstr. 2, 12489 Berlin, Germany Department of Applied Physics, KTH Royal Institute of Technology, SE-106 91 Stockholm, Sweden State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS), Shanghai 200050, China CAS Center for Excellence in Superconducting Electronics, Shanghai 200050, China Physics Institute, University of Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland (Dated: August 11, 2021)

Keywords: photoresponse properties; physics; properties disordered; magnetoconductance photoresponse; nbtin films; disordered nbtin

Journal Title: Physical Review B
Year Published: 2021

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