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Adsorption and dynamics of Si atoms at the monolayer Pb/Si(111) surface

In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125 to 230… Click to show full abstract

In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125 to 230 K using a variable-temperature scanning tunneling microscope. The Pb-covered Si(111) surface forms a low-symmetry rowlike ($\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{3}$) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (${T}_{1A}$ and ${T}_{1B}$) on the trimer row after deposition at the sample temperature of $\ensuremath{\sim}125\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. The Si atoms were immobile at low temperatures and started to switch between the two neighboring ${T}_{1A}$ and ${T}_{1B}$ sites within the same trimer when the temperature was raised to $\ensuremath{\sim}150\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. When the temperature was raised above $\ensuremath{\sim}160\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, the adsorbed Si atoms could hop to other trimers along the same trimer row. Below $\ensuremath{\sim}170\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, short hops to adjacent trimers dominated, but long hops dominated at temperatures above $\ensuremath{\sim}170\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. The activation energy and prefactor for the Si atoms diffusion were derived through analysis of continuous-time imaging at temperatures from 160 to 174 K. In addition, irreversible aggregation of single Si atoms into Si clusters started to occur at the phase boundaries or defective sites at temperatures above $\ensuremath{\sim}170\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. At temperature above $\ensuremath{\sim}180\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, nearly all Si atoms aggregated into clusters, which may have important implications for the atomic mechanism of epitaxial growth of Si on the Pb-covered Si(111) surface. In addition, our study provides strong evidence for breaking in the mirror symmetry in the ($\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{3}$)-Pb structure, which has implications for the atomic model of this controversial structure.

Keywords: phantom rule; rule 16em; ensuremath sim; 16em 0ex; 0ex mathrm

Journal Title: Physical Review B
Year Published: 2017

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