LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Temperature dynamics of the electronic structure in dilute Bi-Sn alloys

Photo from academic.microsoft.com

We study the changes of Bi electronic structure near T and L points of the Brillouin zone caused by doping with Sn (concentrations 0.08 at.%). Hall coefficient and magnetoresistance measurements… Click to show full abstract

We study the changes of Bi electronic structure near T and L points of the Brillouin zone caused by doping with Sn (concentrations 0.08 at.%). Hall coefficient and magnetoresistance measurements (under magnetic field up to 8 T) enabled calculation of magnetoconductivity tensor components. The usage of quantitative mobility spectrum analysis together with the isotropic approximation for band structure allowed the estimation of Fermi level position at temperatures 10–300 K. The results have shown that Sn doping shifts the Fermi level down on the energy scale at the L point (in all temperature range) and at the T point under (primarily at low temperatures), leading to the decrease of band overlap.

Keywords: structure dilute; dynamics electronic; electronic structure; temperature dynamics; structure

Journal Title: Physical Review B
Year Published: 2018

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.