Photo from academic.microsoft.com
We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal… Click to show full abstract
We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.
Journal Title: Physical Review B
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!