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Bond-strength inversion in (In,Ga)As semiconductor alloys

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The research leading to these results has received funding from the European Community’s Seventh Framework Programme (FP7/2007-2013) under Grant Agreement No. n.◦312284 (CALIPSO), from the Friedrich-Schiller-Universitat Jena under the ProChance… Click to show full abstract

The research leading to these results has received funding from the European Community’s Seventh Framework Programme (FP7/2007-2013) under Grant Agreement No. n.◦312284 (CALIPSO), from the Friedrich-Schiller-Universitat Jena under the ProChance Initiative (2.11.3-A1/2012-01), and from the German Research Foundation (DFG) under Grant No. SCHN 1283/2-1.

Keywords: semiconductor alloys; inversion semiconductor; strength inversion; bond strength

Journal Title: Physical Review B
Year Published: 2018

Link to full text (if available)


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