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Pressure effect on the electronic, structural, and vibrational properties of layered 2H−MoTe2

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Xiao-Miao Zhao,1,2,3 Han-yu Liu,3 Alexander F. Goncharov,3 Zhi-Wei Zhao,2 Viktor V. Struzhkin,3 Ho-Kwang Mao,3,1 Alexander G. Gavriliuk,4,5,6 and Xiao-Jia Chen1,7,3,* 1Center for High Pressure Science and Technology Advanced Research, Shanghai… Click to show full abstract

Xiao-Miao Zhao,1,2,3 Han-yu Liu,3 Alexander F. Goncharov,3 Zhi-Wei Zhao,2 Viktor V. Struzhkin,3 Ho-Kwang Mao,3,1 Alexander G. Gavriliuk,4,5,6 and Xiao-Jia Chen1,7,3,* 1Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China 2College of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China 3Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015, USA 4Institute for Nuclear Research, Russian Academy of Sciences, Moscow, Troitsk 108840, Russia 5FSRC Crystallography and Photonics of Russian Academy of Sciences, Moscow 119333, Russia 6REC Functional Nanomaterials, Immanuel Kant Baltic Federal University, Kaliningrad 236041, Russia 7Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Science, Hefei 230031, China

Keywords: effect electronic; physics; structural vibrational; pressure effect; electronic structural; pressure

Journal Title: Physical Review B
Year Published: 2019

Link to full text (if available)


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