LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Anomalous de Haas-van Alphen Effect in InAs/GaSb Quantum Wells.

Photo by ivybarn from unsplash

The de Haas-van Alphen effect describes the periodic oscillation of the magnetization in a material as a function of an inverse applied magnetic field. It forms the basis of a… Click to show full abstract

The de Haas-van Alphen effect describes the periodic oscillation of the magnetization in a material as a function of an inverse applied magnetic field. It forms the basis of a well established procedure for measuring Fermi surface properties, and its observation is typically taken as a direct signature of a system being metallic. However, certain insulators can show similar oscillations of the magnetization from quantization of the energies of electron states in filled bands. Recently, the theory of such an anomalous dHvAE (AdHvAE) was worked out, but there has not yet been a clear experimental observation. Here, we show that the inverted narrow gap regime of InAs/GaSb quantum wells is an ideal platform for the observation of the AdHvAE. From our microscopic calculations, we make quantitative predictions for the relevant magnetic field and temperature regimes, and we describe unambiguous experimental signatures.

Keywords: quantum wells; inas gasb; alphen effect; haas van; gasb quantum; van alphen

Journal Title: Physical review letters
Year Published: 2017

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.