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Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors.

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We study theoretically weak localization of excitons in atomically thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a… Click to show full abstract

We study theoretically weak localization of excitons in atomically thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the quantum contribution to the diffusion coefficient is considerable for the state-of-the-art monolayer and bilayer transition metal dichalcogenides.

Keywords: interference effect; monolayer; quantum interference; diffusion coefficient; interference; exciton

Journal Title: Physical review letters
Year Published: 2020

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