LAUSR

While the downscaling of size for field effect transistors is highly desirable for computation efficiency, quantum tunneling at the Si/SiO_{2} interface becomes the leading concern when approaching the nanometer scale. By developing a machine-learning-based global search method, we now reveal all the likely Si/SiO_{2} interface structures from thousands of candidates. Two high Miller index Si(210) and (211) interfaces, being only ∼1  nm in periodicity, are found to possess good carrier mobility, low carrier trapping, and low interfacial energy. The results provide the basis for fabricating stepped Si surfaces for next-generation transistors.