LAUSR

Jingzhi Shang,1,2 Chunxiao Cong,3 Xiaonan Shen,2 Weihuang Yang,2 Chenji Zou,2 Namphung Peimyoo,2 Bingchen Cao,2 Mustafa Eginligil,2,5 Wei Lin,4 Wei Huang,1,5,6,* and Ting Yu2,† 1Institute of Flexible Electronics, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China 2Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 3State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, China 4Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China 5Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) National Jiangsu Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China 6Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications Nanjing 210023, Jiangsu, China (Received 31 May 2017; published 13 December 2017)