LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Photo by drew_hays from unsplash

Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, ∗ Martin Friedl, † Marco Salvalaglio, Axel Voigt, 4 Francesco Montalenti, Gözde Tütüncüoglu, ‡ Anna Fontcuberta i Morral, and Leo Miglio L-NESS and Dept.… Click to show full abstract

Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, ∗ Martin Friedl, † Marco Salvalaglio, Axel Voigt, 4 Francesco Montalenti, Gözde Tütüncüoglu, ‡ Anna Fontcuberta i Morral, and Leo Miglio L-NESS and Dept. of Materials Science, Università di Milano-Bicocca, 20125, Milano, Italy Laboratory of Semiconductor Materials, École Polytechnique Fédérale de Lausanne, EPFL, 1015, Lausanne, Switzerland Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany Dresden Center for Computational Materials Science (DCMS), Technische Universität Dresden, 01062 Dresden, Germany (Dated: August 27, 2018)

Keywords: homoepitaxial gaas; growth kinetics; gaas fins; kinetics morphological; analysis homoepitaxial; morphological analysis

Journal Title: Physical Review Materials
Year Published: 2018

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.