V. Ranjan, B. Albanese, E. Albertinale, E. Billaud, D. Flanigan, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, Y. M. Niquet, and P.… Click to show full abstract
V. Ranjan, B. Albanese, E. Albertinale, E. Billaud, D. Flanigan, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, Y. M. Niquet, and P. Bertet1∗ Université Paris-Saclay, CEA, CNRS, SPEC, 91191 Gif-sur-Yvette Cedex, France School of Electrical Engineering and Telecommunications, University of New South Wales, Anzac Parade, Sydney, New South Wales 2052, Australia Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom Université Grenoble Alpes, CEA, IRIG-MEM-L SIM, 38000 Grenoble, France and National Physical Laboratory, Teddington TW11 0LW, United Kingdom
               
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