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X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices. Click to show full abstract
X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices.
Keywords:
ray diffraction;
diffraction measurement;
warpage;
nondestructive ray;
ray
Journal Title: Journal of Applied Crystallography
Year Published: 2017
Link to full text (if available)
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Journal Title: Journal of Applied Crystallography
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!