A method to distinguish between two symmetrically equivalent opposite ð1120Þ and ð1120Þ faces of an a-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis… Click to show full abstract
A method to distinguish between two symmetrically equivalent opposite ð1120Þ and ð1120Þ faces of an a-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis makes it possible to determine the ‘sign’ of the sapphire a face in contrast to the ‘sign’ of the c, m or r faces. Correct determination of the a-plane wafer orientation is important for further growth and processing of heteroepitaxial structures.
               
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