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Non-destructive interface characterization of boron carbide shows a significant change at 550°C in the interface region formed between an adhesive chromium layer and native oxide layer on silicon substrate, whereas… Click to show full abstract
Non-destructive interface characterization of boron carbide shows a significant change at 550°C in the interface region formed between an adhesive chromium layer and native oxide layer on silicon substrate, whereas the principal layer of boron carbide remains stable.
Keywords:
study interface;
b4c mirror;
mirror elevated;
interface;
reaction b4c;
interface reaction
Journal Title: Journal of Synchrotron Radiation
Year Published: 2022
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Journal Title: Journal of Synchrotron Radiation
Year Published: 2022
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!