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The effect of substrate temperature, growth rate and film thickness on the crystallographic characteristics of polycrystalline Bi thin films by molecular beam epitaxy and semimetal–semiconductor transition are discussed. Meanwhile, a… Click to show full abstract
The effect of substrate temperature, growth rate and film thickness on the crystallographic characteristics of polycrystalline Bi thin films by molecular beam epitaxy and semimetal–semiconductor transition are discussed. Meanwhile, a structure-zone model and a two-transport-channels model are introduced to explain the crystal growth characteristics and the semimetal–semiconductor transition.
Keywords:
growth;
semimetal semiconductor;
semiconductor transition;
thin films
Journal Title: IUCrJ
Year Published: 2020
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Journal Title: IUCrJ
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!