Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance… Click to show full abstract
Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance is significantly impacted by total-ionizing dose (TID) effects. In this paper, the TID effects of TMD FETs are investigated comprehensively by means of developing a surface-potential based drain current model. Not only the radiation-induced trapped charges but also mobility degradation are incorporated into the proposed model. The model approach is demonstrated for a bottom-gated TMD FET, that simulation results are in good agreement with the experimental data. Based on the validity of the proposed method, the influence of TID effects on the TMD-on-insulator (TMDOI) FET is presented and discussed under different total dose levels. The results show that surface potential is strongly dependent on the oxide trapped charges, resulting in a major contribution to the negative shift of threshold voltage and the significant increase of leakage current. Besides, the interface trapped charges reduce the effective carrier mobility, which plays a dominant role on the decrease of transconductance and increase of subthreshold voltage swing. Finally, this paper gives insight into some possible mitigation techniques of TID effects on TMD FETs.
               
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