LAUSR

A phase change memory (PCM) model suitable for neuromorphic circuit simulations is developed. A crystallization ratio module is used to track the memory state in the SET process, and an active region radius module is developed to track the continuously varying amorphous region in the RESET process. To converge the simulations with bi-stable memory states, a predictive filament module is proposed using a previous state in iterations of nonlinear circuit matrix under a voltage-driven mode. Both DC and transient analysis are successfully converged in circuits with voltage sources. The spiking-time-dependent-plasticity (STDP) characteristics essential for synaptic PCM are successfully reproduced with SPICE simulations verifying the model’s promising applications in neuromorphic circuit designs. Further on, the developed PCM model is applied to propose a neuron circuit topology with lateral inhibitions which is more bionic and capable of distinguishing fuzzy memories. Finally, unsupervised learning of handwritten digits on neuromorphic circuits is simulated to verify the integrity of models in a large-scale-integration circuits. For the first time in literature an emerging memory model is developed and applied successfully in neuromorphic circuit designs, and the model is applicable to flexible designs of neuron circuits for further performance improvements.