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Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when… Click to show full abstract
Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when such a transformation should be made carefully. Connections between this transformation, duality rules, and Chua’s table of higher-order elements are described. The proposed transforming cells can be made up of commercially available integrated circuits. Their proper operation is demonstrated via simulations and lab experiments with memristive oscillators.
Journal Title: IEEE Access
Year Published: 2022
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