LAUSR

The semiconductors with nanometer-scale are subjected to various patterns and scaling using the latest technology. The most widely used methods are top-down approaches in the design of complex heterostructures. The top-down approach involves the photolithography to ion sequentially beaming of the materials. In this context, the alternative layer-by-layer approach with cylindrical structures has been discussed and supported by the subsequent results to make Cylindrical Surrounding Double-Gate (CSDG) MOSFETs in this research work. This method involves the making of cylindrical structures with high-resolution morphological structures of CSDG MOSFETs. The process has been described in detail to design the CSDG MOSFETs with high-ƙ dielectric materials to make them suitable for low-frequency RF applications. The fast modulation of the Single Nano Wire (SNW) has been adopted for complex heterostructure modeling. The high-ƙ dielectric materials are placed in between the spacer and the gate material to overcome the Short Channel Effects (SCEs). This method produces symmetrical and concentric cylindrical structures of the CSDG MOSFETs with suitable layers. The minimum layer thickness achieved is about 10 nm axial length along with the core of the SNW. This gives enough insight for the proposed cylindrical structure to fabricate over the core of 2DEG. In this type of structure development, many cylindrical structures with various properties can be designed. The parameters focused on the cylindrical structure will be periodic, non-periodic, symmetric, asymmetric structures, and gaps/dots of nanometer scale. This innovative method introduces the method of designing the symmetric CSDG MOSFET concerning the center core. In this work, the authors focus on the suitable novel technique of designing cylindrical structures with unique dimensions and physical properties using various semiconductor materials.