LAUSR

This paper presents a novel nonlinear behavioral modeling methodology based on long-short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility transistors (HEMTs). There are both theoretical foundations and practical implementations of the modeling procedure provided in this paper. To determine the most appropriate optimizer algorithm for the model presented in this work, four different optimization algorithms are examined. The results of both simulation and experimental validation are provided based on a 10-W GaN HEMT device. According to the developed investigation, the model is capable of extrapolating and interpolating over multiple input power levels and frequencies, including linear, weakly nonlinear, and strongly nonlinear areas. The analysis of the simulated and measured results shows that the developed model has superior performance also when considering the DC drain current (Ids.). Compared with the existing support vector regression (SVR) based model and the Bayesian based model, the proposed approach shows a significantly improved extrapolation capability.