LAUSR

A theoretical study that highlights the dielectric constant modulation effect of the surrounding environment material (EM) on 2-D semiconductor devices is presented. With graphene nanoribbon as the vehicle, it is shown that the dielectric constant of the EM can remarkably affect the electrical profiles inside the 2-D material. Using numerical simulations, the effects are illustrated with an unbiased PN junction. The electric potential, electric field, and depletion width are modulated with the EM. Changing the dielectric constant of the EM can be viewed qualitatively as changing the dielectric constant of the 2-D material. It is also demonstrated that the performances of both the MOSFET and the tunnel FET can be boosted with the dielectric engineering of the EM. A new physical insight into the dielectric engineering of 2-D semiconductor devices is presented, which can be utilized to optimize the device performance.