A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped… Click to show full abstract
A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be present in an FeFET, and an n+ Si electrode. The HfO2 n+ silicon is shown to have a coercive voltage of 2.9 V compared to 1.9 V for the film deposited on TiN. This is shown to be due to a 1.2 nm oxide present at the HfO2/Si interface dropping 36% of the voltage that is applied to the ferroelectric film stack. An FeFET fabricated with the film shows a 0.55 V threshold voltage shift due to ferroelectric polarization charge for a maximum applied gate bias of 5 V. After accounting for non-zero flat-band voltages, a 5 V bias on the transistor gate is shown to correspond to a
               
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